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NTE2369

NTE2369 NTE Electronics, Inc

nte2369.pdf Виробник: NTE Electronics, Inc
Description: T-NPN SI DIGITAL 4.7K/47K
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: TO-92S
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+46.05 грн
20+42.12 грн
30+39.91 грн
40+35.37 грн
50+34.51 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
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Технічний опис NTE2369 NTE Electronics, Inc

Description: T-NPN SI DIGITAL 4.7K/47K, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 Short Body, Mounting Type: Through Hole, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: TO-92S, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.