NTE2375 NTE Electronics, Inc
Виробник: NTE Electronics, Inc
Description: MOSFET N-CHANNEL 100V 41A TO247
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Description: MOSFET N-CHANNEL 100V 41A TO247
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 751.79 грн |
10+ | 687.78 грн |
20+ | 651.62 грн |
50+ | 577.58 грн |
100+ | 563.88 грн |
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Технічний опис NTE2375 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 100V 41A TO247, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Інші пропозиції NTE2375
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTE2375 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 120A; 230W; TO247 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: TO247 Drain-source voltage: 100V Drain current: 29A On-state resistance: 55mΩ Type of transistor: N-MOSFET Mounting: THT Power dissipation: 230W кількість в упаковці: 1 шт |
товар відсутній |
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NTE2375 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 120A; 230W; TO247 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: TO247 Drain-source voltage: 100V Drain current: 29A On-state resistance: 55mΩ Type of transistor: N-MOSFET Mounting: THT Power dissipation: 230W |
товар відсутній |