NTE2378 NTE Electronics, Inc
Виробник: NTE Electronics, IncDescription: MOSFET N-CHANNEL 900V 5A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 521.08 грн |
| 10+ | 476.62 грн |
| 20+ | 451.46 грн |
| 50+ | 400.07 грн |
| 100+ | 390.62 грн |
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Технічний опис NTE2378 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 900V 5A TO3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V.
Інші пропозиції NTE2378
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTE2378 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 10A; 120W; TO3P Drain-source voltage: 900V Drain current: 5A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 10A Mounting: THT Case: TO3P кількість в упаковці: 1 шт |
товар відсутній |
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| NTE2378 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 10A; 120W; TO3P Drain-source voltage: 900V Drain current: 5A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 10A Mounting: THT Case: TO3P |
товар відсутній |