NTE2396 NTE Electronics, Inc
Виробник: NTE Electronics, Inc
Description: MOSFET N-CHANNEL 100V 28A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CHANNEL 100V 28A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 389.72 грн |
10+ | 356.55 грн |
20+ | 337.82 грн |
50+ | 299.46 грн |
100+ | 292.3 грн |
Відгуки про товар
Написати відгук
Технічний опис NTE2396 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 100V 28A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Інші пропозиції NTE2396 за ціною від 281.64 грн до 509.18 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTE2396 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 110A Power dissipation: 150W Case: TO220 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Kind of channel: enhanced |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
NTE2396 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 110A Power dissipation: 150W Case: TO220 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 7-14 дні (днів) |
|