NTE2914 NTE Electronics
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F
Kind of channel: enhancement
Mounting: THT
Case: TO220F
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Gate-source voltage: ±20V
Drain current: 25A
Power dissipation: 25W
Drain-source voltage: 60V
Pulsed drain current: 100A
Polarisation: unipolar
| Кількість | Ціна |
|---|---|
| 2+ | 310.65 грн |
| 3+ | 259.61 грн |
| 10+ | 229.07 грн |
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Технічний опис NTE2914 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F, Kind of channel: enhancement, Mounting: THT, Case: TO220F, Type of transistor: N-MOSFET, On-state resistance: 26mΩ, Gate-source voltage: ±20V, Drain current: 25A, Power dissipation: 25W, Drain-source voltage: 60V, Pulsed drain current: 100A, Polarisation: unipolar.