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NTE2934

NTE2934 NTE Electronics, Inc

nte2934.pdf
Виробник: NTE Electronics, Inc
Description: MOSFET N-CH 400V 11.5A TO3PML
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PML
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 92W (Tc)
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.75A, 10V
на замовлення 449 шт:
термін постачання 21-31 дні (днів)
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Технічний опис NTE2934 NTE Electronics, Inc

Description: MOSFET N-CH 400V 11.5A TO3PML, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PML, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 92W (Tc), Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Bag, Rds On (Max) @ Id, Vgs: 300mOhm @ 5.75A, 10V.