NTE2946 NTE Electronics, Inc
Виробник: NTE Electronics, Inc
Description: MOSFET-PWR N-CHAN ENHAN
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
FET Feature: Standard
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Description: MOSFET-PWR N-CHAN ENHAN
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
FET Feature: Standard
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
на замовлення 362 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 461.31 грн |
10+ | 422.08 грн |
20+ | 399.94 грн |
50+ | 354.55 грн |
100+ | 346.11 грн |
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Технічний опис NTE2946 NTE Electronics, Inc
Description: MOSFET-PWR N-CHAN ENHAN, Packaging: Bag, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A, Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, FET Feature: Standard, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V.
Інші пропозиції NTE2946
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTE2946 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 32A; 40W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.2A Pulsed drain current: 32A Power dissipation: 40W Case: TO220F Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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NTE2946 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 32A; 40W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.2A Pulsed drain current: 32A Power dissipation: 40W Case: TO220F Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhanced |
товар відсутній |