NTE2960 NTE Electronics, Inc
Виробник: NTE Electronics, IncDescription: MOSFET-N-CHAN ENHANCEMENT
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220 Full Pack
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 620.11 грн |
| 10+ | 567.39 грн |
| 20+ | 537.63 грн |
| 50+ | 476.63 грн |
| 100+ | 464.94 грн |
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Технічний опис NTE2960 NTE Electronics, Inc
Description: MOSFET-N-CHAN ENHANCEMENT, Packaging: Bag, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 40W, Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220 Full Pack.
Інші пропозиції NTE2960
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTE2960 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 40W; TO220FN Drain-source voltage: 900V Drain current: 7A On-state resistance: 1.54Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Mounting: THT Case: TO220FN кількість в упаковці: 1 шт |
товар відсутній |
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| NTE2960 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 40W; TO220FN Drain-source voltage: 900V Drain current: 7A On-state resistance: 1.54Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Mounting: THT Case: TO220FN |
товар відсутній |