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NTE2960

NTE2960 NTE Electronics, Inc

nte2960.pdf
Виробник: NTE Electronics, Inc
Description: MOSFET-N-CHAN ENHANCEMENT
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 900V
Power - Max: 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Configuration: 2 N-Channel
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bag
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+670.23 грн
10+613.25 грн
20+581.09 грн
50+515.16 грн
100+502.52 грн
В кошику  од. на суму  грн.
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Технічний опис NTE2960 NTE Electronics, Inc

Description: MOSFET-N-CHAN ENHANCEMENT, Supplier Device Package: TO-220 Full Pack, Vgs(th) (Max) @ Id: 4V @ 1mA, Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 7A, Drain to Source Voltage (Vdss): 900V, Power - Max: 40W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C, Configuration: 2 N-Channel, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bag.