NTE2997 NTE Electronics
Виробник: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN
Kind of package: tube
Power dissipation: 100W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -7A
Kind of channel: enhanced
Drain-source voltage: -160V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Case: TO3PN
Mounting: THT
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN
Kind of package: tube
Power dissipation: 100W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -7A
Kind of channel: enhanced
Drain-source voltage: -160V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Case: TO3PN
Mounting: THT
кількість в упаковці: 1 шт
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Технічний опис NTE2997 NTE Electronics
Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN, Kind of package: tube, Power dissipation: 100W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Drain current: -7A, Kind of channel: enhanced, Drain-source voltage: -160V, Type of transistor: P-MOSFET, Gate-source voltage: ±15V, Case: TO3PN, Mounting: THT, кількість в упаковці: 1 шт.
Інші пропозиції NTE2997
Фото | Назва | Виробник | Інформація |
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NTE2997 | Виробник : NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN Kind of package: tube Power dissipation: 100W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: -7A Kind of channel: enhanced Drain-source voltage: -160V Type of transistor: P-MOSFET Gate-source voltage: ±15V Case: TO3PN Mounting: THT |
товар відсутній |