NTE464 NTE Electronics, Inc
Виробник: NTE Electronics, IncDescription: MOSFET-P CHANNEL AMP/SW
Packaging: Bag
Package / Case: TO-72-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 600Ohm @ 0A, 10V
FET Feature: Standard
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 5V @ 10A
Supplier Device Package: TO-72
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1288.36 грн |
| 10+ | 1178.75 грн |
| 20+ | 1116.86 грн |
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Технічний опис NTE464 NTE Electronics, Inc
Description: MOSFET-P CHANNEL AMP/SW, Packaging: Bag, Package / Case: TO-72-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A, Rds On (Max) @ Id, Vgs: 600Ohm @ 0A, 10V, FET Feature: Standard, Power Dissipation (Max): 800mW (Tc), Vgs(th) (Max) @ Id: 5V @ 10A, Supplier Device Package: TO-72, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 25 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V.
Інші пропозиції NTE464
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTE464 | Виробник : NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -0.3A; 800mW; TO72 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Drain current: -0.3A Power dissipation: 0.8W Case: TO72 Gate-source voltage: ±30V On-state resistance: 600Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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| NTE464 | Виробник : NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -0.3A; 800mW; TO72 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Drain current: -0.3A Power dissipation: 0.8W Case: TO72 Gate-source voltage: ±30V On-state resistance: 600Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |