NTE464 NTE Electronics, Inc

Description: MOSFET-P CHANNEL AMP/SW, Packaging: Bag, Package / Case: TO-72-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A, Rds On (Max) @ Id, Vgs: 600Ohm @ 0A, 10V, FET Feature: Standard, Power Dissipation (Max): 800mW (Tc), Vgs(th) (Max) @ Id: 5V @ 10A, Supplier Device Package: TO-72, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 25 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V.