Технічний опис NTE4979 NTE Electronics, Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 170V; 6.4A; bidirectional; Ø9,52x5,21mm; 1.5kW, Type of diode: TVS, Semiconductor structure: bidirectional, Max. off-state voltage: 145V, Case: Ø9,52x5,21mm, Max. forward impulse current: 6.4A, Mounting: THT, Leakage current: 5µA, Peak pulse power dissipation: 1.5kW, Breakdown voltage: 170V, кількість в упаковці: 1 шт.
Інші пропозиції NTE4979
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTE4979 | Виробник : NTE Electronics |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 170V; 6.4A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Semiconductor structure: bidirectional Max. off-state voltage: 145V Case: Ø9,52x5,21mm Max. forward impulse current: 6.4A Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Breakdown voltage: 170V кількість в упаковці: 1 шт |
товар відсутній |
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| NTE4979 | Виробник : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 170V; 6.4A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Semiconductor structure: bidirectional Max. off-state voltage: 145V Case: Ø9,52x5,21mm Max. forward impulse current: 6.4A Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Breakdown voltage: 170V |
товар відсутній |