NTE576-6 NTE Electronics, Inc
Виробник: NTE Electronics, IncDescription: DIODE GEN PURP 600V 5A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.82 грн |
| 10+ | 128.65 грн |
| 20+ | 122.4 грн |
| 50+ | 108.34 грн |
| 100+ | 105.73 грн |
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Технічний опис NTE576-6 NTE Electronics, Inc
Description: DIODE GEN PURP 600V 5A DO201AD, Packaging: Bag, Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 75pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.