NTE5829 NTE Electronics, Inc
Виробник: NTE Electronics, IncDescription: DIODE GP 800V 50A PRESS FIT
Packaging: Bag
Package / Case: Press Fit
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Press Fit
Operating Temperature - Junction: -65°C ~ 195°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1013.21 грн |
| 10+ | 927.01 грн |
| 20+ | 878.33 грн |
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Технічний опис NTE5829 NTE Electronics, Inc
Description: DIODE GP 800V 50A PRESS FIT, Packaging: Bag, Package / Case: Press Fit, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 50A, Supplier Device Package: Press Fit, Operating Temperature - Junction: -65°C ~ 195°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A, Current - Reverse Leakage @ Vr: 200 µA @ 800 V.
Інші пропозиції NTE5829
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTE5829 | Виробник : NTE Electronics |
Category: Diodes - others Description: Diode: rectifying; 800V; 50A; cathode on wire; Ifsm: 600A; Ir: 2mA Type of diode: rectifying Features of semiconductor devices: alternator diode Mounting: Press-Fit Max. off-state voltage: 0.8kV Max. forward voltage: 1.18V Load current: 50A Semiconductor structure: cathode on wire Max. forward impulse current: 600A Leakage current: 2mA кількість в упаковці: 1 шт |
товар відсутній |
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| NTE5829 | Виробник : NTE Electronics |
Category: Diodes - others Description: Diode: rectifying; 800V; 50A; cathode on wire; Ifsm: 600A; Ir: 2mA Type of diode: rectifying Features of semiconductor devices: alternator diode Mounting: Press-Fit Max. off-state voltage: 0.8kV Max. forward voltage: 1.18V Load current: 50A Semiconductor structure: cathode on wire Max. forward impulse current: 600A Leakage current: 2mA |
товар відсутній |