NTE623 NTE Electronics, Inc
Виробник: NTE Electronics, IncDescription: R-SI DUAL 200V 6A 150NS
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.00 грн |
| 10+ | 101.66 грн |
| 20+ | 96.43 грн |
| 50+ | 85.58 грн |
| 100+ | 83.48 грн |
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Технічний опис NTE623 NTE Electronics, Inc
Description: R-SI DUAL 200V 6A 150NS, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 3A, Supplier Device Package: TO-220, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.