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NTMFD0D9N02P1E onsemi


Виробник: onsemi
Description: IFET 25V 0.9 MOHM PQFN56MP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
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Технічний опис NTMFD0D9N02P1E onsemi

Description: IFET 25V 0.9 MOHM PQFN56MP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 960mW (Ta), 1.04W (Ta), Drain to Source Voltage (Vdss): 30V, 25V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V, Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active.