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NTMFS4C13NBT1G

NTMFS4C13NBT1G onsemi


ntmfs4c13n-d.pdf Виробник: onsemi
Description: NTMFS4C13N - MOSFET SO8FL 30V 38
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 21.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
на замовлення 6286 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1332+15.64 грн
Мінімальне замовлення: 1332
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Технічний опис NTMFS4C13NBT1G onsemi

Description: NTMFS4C13N - MOSFET SO8FL 30V 38, Packaging: Bulk, Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 38A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V, Power Dissipation (Max): 750mW (Ta), 21.6W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V.