Продукція > ONSEMI > NTMT080N60S5

NTMT080N60S5 onsemi

NTMT080N60S5-D.PDF Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис NTMT080N60S5 onsemi

Description: POWER MOSFET, N-CHANNEL, SUPERFE, Packaging: Bulk, Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V, Power Dissipation (Max): 212W (Tc), Vgs(th) (Max) @ Id: 4V @ 3.4mA, Supplier Device Package: 4-TDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V.