NTND31211PZTAG onsemi
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 127mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-XLLGA (0.9x0.65)
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 127mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-XLLGA (0.9x0.65)
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Технічний опис NTND31211PZTAG onsemi
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA, Packaging: Tape & Reel (TR), Package / Case: 6-XFLGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 125mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 127mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V, Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-XLLGA (0.9x0.65).