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NTNS4C69NTCG

NTNS4C69NTCG onsemi

NTNS4C69N_Rev4_Nov2019.pdf Виробник: onsemi
Description: MOSFET N-CH SMD
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 300mA, 4.5V
Power Dissipation (Max): 178mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 15 V
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Технічний опис NTNS4C69NTCG onsemi

Description: MOSFET N-CH SMD, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 300mA, 4.5V, Power Dissipation (Max): 178mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 10µA, Supplier Device Package: SOT-883 (XDFN3) (1x0.6), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 15 V.