Продукція > ONSEMI > NVCR8LS4D1N15MCA

NVCR8LS4D1N15MCA onsemi


NVCR8LS4D1N15MCA-DIE-D.PDF Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, 150 V,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 584µA
Supplier Device Package: Wafer
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V
Qualification: AEC-Q101
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис NVCR8LS4D1N15MCA onsemi

Description: POWER MOSFET, N-CHANNEL, 150 V,, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 171A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tj), Vgs(th) (Max) @ Id: 4.5V @ 584µA, Supplier Device Package: Wafer, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V, Qualification: AEC-Q101.