NVCW4LS001N08HA onsemi

Description: POWER MOSFET, N-CHANNEL, 80 V, 1, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 351A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Power Dissipation (Max): 311W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: Wafer, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V, Qualification: AEC-Q101.