Продукція > ONSEMI > NVMYS016N06CTWG
NVMYS016N06CTWG

NVMYS016N06CTWG onsemi


NVMYS016N06C-D.PDF Виробник: onsemi
Description: POWER MOSFET 60 V, 16M33A, SINGL
Packaging: Bulk
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Power Dissipation (Max): 3.8W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис NVMYS016N06CTWG onsemi

Description: POWER MOSFET 60 V, 16M33A, SINGL, Packaging: Bulk, Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 33A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V, Power Dissipation (Max): 3.8W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 25 V, Qualification: AEC-Q101.