NVTFS012P03P8ZTAG ONSEMI
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.7A
Pulsed drain current: -47A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.7A
Pulsed drain current: -47A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис NVTFS012P03P8ZTAG ONSEMI
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -11.7A, Pulsed drain current: -47A, Power dissipation: 2.4W, Case: WDFN8, Gate-source voltage: ±25V, On-state resistance: 11.3mΩ, Mounting: SMD, Gate charge: 36nC, Kind of package: reel; tape, Kind of channel: enhancement.