Технічний опис NVXK2VR40WDT2 onsemi
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A, Electrical mounting: THT, Topology: MOSFET three-phase bridge, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, Technology: SiC, Semiconductor structure: transistor/transistor, Kind of package: tube, Gate-source voltage: -15...25V, On-state resistance: 71mΩ, Drain current: 31A, Power dissipation: 102W, Pulsed drain current: 170A, Drain-source voltage: 1.2kV, Case: APM32.
Інші пропозиції NVXK2VR40WDT2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| NVXK2VR40WDT2 | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A Electrical mounting: THT Topology: MOSFET three-phase bridge Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor Kind of package: tube Gate-source voltage: -15...25V On-state resistance: 71mΩ Drain current: 31A Power dissipation: 102W Pulsed drain current: 170A Drain-source voltage: 1.2kV Case: APM32 |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. |
| NVXK2VR40WDT2 |
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A
Electrical mounting: THT
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Kind of package: tube
Gate-source voltage: -15...25V
On-state resistance: 71mΩ
Drain current: 31A
Power dissipation: 102W
Pulsed drain current: 170A
Drain-source voltage: 1.2kV
Case: APM32
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A
Electrical mounting: THT
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Kind of package: tube
Gate-source voltage: -15...25V
On-state resistance: 71mΩ
Drain current: 31A
Power dissipation: 102W
Pulsed drain current: 170A
Drain-source voltage: 1.2kV
Case: APM32
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику
од. на суму грн.


