NXPLQSC106506Q WeEn Semiconductors
Виробник: WeEn SemiconductorsDescription: DIODE SCHOTTKY 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
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Технічний опис NXPLQSC106506Q WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 250pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A, Current - Reverse Leakage @ Vr: 230 µA @ 650 V.
Інші пропозиції NXPLQSC106506Q
| Фото | Назва | Виробник | Інформація |
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NXPLQSC106506Q | Виробник : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPLQSC106506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товару немає в наявності |
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NXPLQSC106506Q | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 48A Kind of package: tube |
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