NXPSC08650X6Q WeEn Semiconductors
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
| Кількість | Ціна |
|---|---|
| 1+ | 332.29 грн |
| 10+ | 268.70 грн |
| 100+ | 217.41 грн |
| 500+ | 181.36 грн |
| 1000+ | 155.29 грн |
| 2000+ | 146.22 грн |
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Технічний опис NXPSC08650X6Q WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 230 µA @ 650 V.
Інші пропозиції NXPSC08650X6Q
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
NXPSC08650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.7V Max. forward impulse current: 48A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| NXPSC08650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.