P1000A-CT Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 50V 10A P600
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 175°C
Supplier Device Package: P600
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Strip
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 122.63 грн |
| 20+ | 101.79 грн |
| 40+ | 87.74 грн |
| 80+ | 70.98 грн |
| 160+ | 61.19 грн |
| 320+ | 50.07 грн |
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Технічний опис P1000A-CT Diotec Semiconductor
Description: DIODE GEN PURP 50V 10A P600, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -50°C ~ 175°C, Supplier Device Package: P600, Current - Average Rectified (Io): 10A, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: P600, Axial, Packaging: Strip.