P1000M-CT Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: DIODE GEN PURP 1KV 10A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 144.29 грн |
| 20+ | 119.76 грн |
| 40+ | 103.25 грн |
| 80+ | 86.42 грн |
| 160+ | 72.02 грн |
| 320+ | 58.93 грн |
| 640+ | 34.62 грн |
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Технічний опис P1000M-CT Diotec Semiconductor
Description: DIODE GEN PURP 1KV 10A P600, Packaging: Strip, Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1 V.