P16B6SB-5071 SHINDENGEN
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 37mΩ
Drain current: 16A
Power dissipation: 20W
Gate-source voltage: ±20V
Pulsed drain current: 48A
Drain-source voltage: 60V
Technology: EETMOS3
Kind of channel: enhancement
Case: FB (TO252AA)
Mounting: SMD
Type of transistor: N-MOSFET
| Кількість | Ціна |
|---|---|
| 13+ | 37.19 грн |
| 25+ | 30.88 грн |
| 100+ | 27.40 грн |
| 500+ | 24.52 грн |
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Технічний опис P16B6SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 17nC, On-state resistance: 37mΩ, Drain current: 16A, Power dissipation: 20W, Gate-source voltage: ±20V, Pulsed drain current: 48A, Drain-source voltage: 60V, Technology: EETMOS3, Kind of channel: enhancement, Case: FB (TO252AA), Mounting: SMD, Type of transistor: N-MOSFET.


