P16B6SB-5071 SHINDENGEN
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Technology: EETMOS3
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.10 грн |
| 25+ | 30.81 грн |
| 100+ | 27.34 грн |
| 500+ | 24.46 грн |
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Технічний опис P16B6SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 16A, Pulsed drain current: 48A, Power dissipation: 20W, Case: FB (TO252AA), Gate-source voltage: ±20V, On-state resistance: 37mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 17nC, Technology: EETMOS3.