P16B6SB-5071 SHINDENGEN
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Pulsed drain current: 48A
Power dissipation: 20W
Gate charge: 17nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 37mΩ
Mounting: SMD
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.42 грн |
| 25+ | 30.25 грн |
| 100+ | 26.84 грн |
| 500+ | 24.01 грн |
Відгуки про товар
Написати відгук
Технічний опис P16B6SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W, Pulsed drain current: 48A, Power dissipation: 20W, Gate charge: 17nC, Polarisation: unipolar, Technology: EETMOS3, Drain current: 16A, Kind of channel: enhancement, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: FB (TO252AA), On-state resistance: 37mΩ, Mounting: SMD.