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P18LA12SL-5070 SHINDENGEN

_Shindengen Catalogue 2020.pdf
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
On-state resistance: 44mΩ
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 99W
Gate charge: 47nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LA
товару немає в наявності
Мінімальне замовлення: 3000 шт
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Технічний опис P18LA12SL-5070 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA, On-state resistance: 44mΩ, Mounting: SMD, Pulsed drain current: 54A, Power dissipation: 99W, Gate charge: 47nC, Polarisation: unipolar, Technology: EETMOS3, Drain current: 18A, Kind of channel: enhancement, Drain-source voltage: 120V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: LA.