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P18LA12SL-5070 SHINDENGEN

_Shindengen Catalogue 2020.pdf
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 44mΩ
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 54A
Power dissipation: 99W
Drain-source voltage: 120V
Technology: EETMOS3
Kind of channel: enhancement
Case: LA
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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Технічний опис P18LA12SL-5070 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA, Polarisation: unipolar, Gate charge: 47nC, On-state resistance: 44mΩ, Drain current: 18A, Gate-source voltage: ±20V, Pulsed drain current: 54A, Power dissipation: 99W, Drain-source voltage: 120V, Technology: EETMOS3, Kind of channel: enhancement, Case: LA, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD.