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P19LA10SL-5070 SHINDENGEN

_Shindengen Catalogue 2020.pdf
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 57A
Power dissipation: 83W
Gate charge: 38nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 35mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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Технічний опис P19LA10SL-5070 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA, Case: LA, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 57A, Power dissipation: 83W, Gate charge: 38nC, Polarisation: unipolar, Technology: EETMOS3, Drain current: 19A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 35mΩ.