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P19LA10SL-5070 SHINDENGEN

_Shindengen Catalogue 2020.pdf
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 35mΩ
Drain current: 19A
Gate-source voltage: ±20V
Pulsed drain current: 57A
Power dissipation: 83W
Drain-source voltage: 100V
Technology: EETMOS3
Kind of channel: enhancement
Case: LA
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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Технічний опис P19LA10SL-5070 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA, Polarisation: unipolar, Gate charge: 38nC, On-state resistance: 35mΩ, Drain current: 19A, Gate-source voltage: ±20V, Pulsed drain current: 57A, Power dissipation: 83W, Drain-source voltage: 100V, Technology: EETMOS3, Kind of channel: enhancement, Case: LA, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD.