Продукція > PN JUNCTION SEMICONDUCTOR > P1H06300D8
P1H06300D8

P1H06300D8 PN Junction Semiconductor

P1H06300D8.pdf
Виробник: PN Junction Semiconductor
Description: GANFET N-CH 650V 10A DFN 8X8
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: DFN8*8
Power Dissipation (Max): 55.5W
Current - Continuous Drain (Id) @ 25°C: 10A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис P1H06300D8 PN Junction Semiconductor

Description: GANFET N-CH 650V 10A DFN 8X8, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +10V, -20V, Drive Voltage (Max Rds On, Min Rds On): 6V, Part Status: Active, Supplier Device Package: DFN8*8, Power Dissipation (Max): 55.5W, Current - Continuous Drain (Id) @ 25°C: 10A, FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR).