Технічний опис P1R5B40HP2-5071 Shindengen
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W, Kind of channel: enhancement, Technology: Hi-PotMOS2, Type of transistor: N-MOSFET, Mounting: SMD, Gate charge: 3.9nC, Drain current: 1.5A, On-state resistance: 5Ω, Pulsed drain current: 6A, Gate-source voltage: ±30V, Power dissipation: 35W, Drain-source voltage: 400V, Kind of package: reel; tape, Case: FB (TO252AA), Polarisation: unipolar.
Інші пропозиції P1R5B40HP2-5071
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| P1R5B40HP2-5071 | Виробник : SHINDENGEN |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W Kind of channel: enhancement Technology: Hi-PotMOS2 Type of transistor: N-MOSFET Mounting: SMD Gate charge: 3.9nC Drain current: 1.5A On-state resistance: 5Ω Pulsed drain current: 6A Gate-source voltage: ±30V Power dissipation: 35W Drain-source voltage: 400V Kind of package: reel; tape Case: FB (TO252AA) Polarisation: unipolar |
товару немає в наявності |