P2000BTL-CT Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: DIODE GEN PURP 100V 20A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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Технічний опис P2000BTL-CT Diotec Semiconductor
Description: DIODE GEN PURP 100V 20A P600, Packaging: Strip, Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.