P2000MTL-CT Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1KV 20A P600
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -50°C ~ 175°C
Supplier Device Package: P600
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Strip
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Технічний опис P2000MTL-CT Diotec Semiconductor
Description: DIODE GEN PURP 1KV 20A P600, Current - Reverse Leakage @ Vr: 10 µA @ 1 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -50°C ~ 175°C, Supplier Device Package: P600, Current - Average Rectified (Io): 20A, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: P600, Axial, Packaging: Strip.