P22FE4SBK-5071 SHINDENGEN
Виробник: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Drain current: 22A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Application: automotive industry
Power dissipation: 24W
кількість в упаковці: 1 шт
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Технічний опис P22FE4SBK-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W, Kind of package: reel; tape, Polarisation: unipolar, Case: FE (TO252AB similar), Mounting: SMD, Gate charge: 16.5nC, Technology: EETMOS3, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 66A, Drain current: 22A, On-state resistance: 19mΩ, Type of transistor: N-MOSFET, Drain-source voltage: 40V, Application: automotive industry, Power dissipation: 24W, кількість в упаковці: 1 шт.
Інші пропозиції P22FE4SBK-5071
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| P22FE4SBK-5071 | Виробник : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Drain current: 22A On-state resistance: 19mΩ Type of transistor: N-MOSFET Drain-source voltage: 40V Application: automotive industry Power dissipation: 24W |
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