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P23LA10SL-5070 SHINDENGEN

_Shindengen Catalogue 2020.pdf
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 23A; Idm: 69A; 99W; LA
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 29mΩ
Drain current: 23A
Gate-source voltage: ±20V
Pulsed drain current: 69A
Power dissipation: 99W
Drain-source voltage: 100V
Technology: EETMOS3
Kind of channel: enhancement
Case: LA
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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Технічний опис P23LA10SL-5070 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 23A; Idm: 69A; 99W; LA, Polarisation: unipolar, Gate charge: 46nC, On-state resistance: 29mΩ, Drain current: 23A, Gate-source voltage: ±20V, Pulsed drain current: 69A, Power dissipation: 99W, Drain-source voltage: 100V, Technology: EETMOS3, Kind of channel: enhancement, Case: LA, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD.