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P3D06004G2

P3D06004G2 PN Junction Semiconductor

P3D06004G2.pdf
Виробник: PN Junction Semiconductor
Description: DIODE SIL CARB 650V 14A TO263-2
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 14A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Package / Case: TO-263-2
Packaging: Tape & Reel (TR)
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Технічний опис P3D06004G2 PN Junction Semiconductor

Description: DIODE SIL CARB 650V 14A TO263-2, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263-2, Current - Average Rectified (Io): 14A, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Package / Case: TO-263-2, Packaging: Tape & Reel (TR).