P3D06006G2 PN Junction Semiconductor
Виробник: PN Junction SemiconductorDescription: DIODE SIL CARB 650V 21A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-2
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
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Технічний опис P3D06006G2 PN Junction Semiconductor
Description: DIODE SIL CARB 650V 21A TO263-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-2, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 21A, Supplier Device Package: TO-263-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.