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P3M12017K4

P3M12017K4 PN Junction Semiconductor

P3M12017K4.pdf
Виробник: PN Junction Semiconductor
Description: SICFET N-CH 1200V 151A TO-247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.5V @ 75mA (Typ)
Power Dissipation (Max): 789W
Rds On (Max) @ Id, Vgs: 24mOhm @ 75A, 15V
Current - Continuous Drain (Id) @ 25°C: 151A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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Технічний опис P3M12017K4 PN Junction Semiconductor

Description: SICFET N-CH 1200V 151A TO-247-4, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 2.5V @ 75mA (Typ), Power Dissipation (Max): 789W, Rds On (Max) @ Id, Vgs: 24mOhm @ 75A, 15V, Current - Continuous Drain (Id) @ 25°C: 151A, FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.