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P3M12025K4

P3M12025K4 PN Junction Semiconductor

P3M12025K4.pdf
Виробник: PN Junction Semiconductor
Description: SICFET N-CH 1200V 112A TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ)
Power Dissipation (Max): 577W
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 112A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2232.04 грн
11+2041.89 грн
В кошику  од. на суму  грн.
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Технічний опис P3M12025K4 PN Junction Semiconductor

Description: SICFET N-CH 1200V 112A TO-247-4, Packaging: Tube, Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ), Power Dissipation (Max): 577W, Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V, Current - Continuous Drain (Id) @ 25°C: 112A, FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247-4L.