P3M12040G7 PN Junction Semiconductor

Description: SICFET N-CH 1200V 69A TO-263-7, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ), Power Dissipation (Max): 357W, Rds On (Max) @ Id, Vgs: 53mOhm @ 40A, 15V, Current - Continuous Drain (Id) @ 25°C: 69A, FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).