P40B10SN-5071 SHINDENGEN
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 56nC
On-state resistance: 16.8mΩ
Power dissipation: 62.5W
Drain current: 40A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Polarisation: unipolar
| Кількість | Ціна |
|---|---|
| 7+ | 70.35 грн |
| 11+ | 41.91 грн |
| 25+ | 37.08 грн |
| 100+ | 33.34 грн |
| 500+ | 31.05 грн |
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Технічний опис P40B10SN-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W, Case: FB (TO252AA), Kind of package: reel; tape, Technology: EETMOS3, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Gate charge: 56nC, On-state resistance: 16.8mΩ, Power dissipation: 62.5W, Drain current: 40A, Gate-source voltage: ±20V, Pulsed drain current: 40A, Drain-source voltage: 100V, Polarisation: unipolar.