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P50B4EA-5071 SHINDENGEN

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Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W
Mounting: SMD
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 62.5W
Pulsed drain current: 200A
Technology: EETMOS2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC

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Технічний опис P50B4EA-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W, Mounting: SMD, Kind of package: reel; tape, Case: FB (TO252AA), On-state resistance: 4.5mΩ, Gate-source voltage: ±20V, Drain-source voltage: 40V, Drain current: 50A, Power dissipation: 62.5W, Pulsed drain current: 200A, Technology: EETMOS2, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 52nC.