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P56LA4SN-5070 SHINDENGEN

_Shindengen Catalogue 2020.pdf
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 56A; Idm: 168A; 99W; LA
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 99W
Case: LA
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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Технічний опис P56LA4SN-5070 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 56A; Idm: 168A; 99W; LA, Type of transistor: N-MOSFET, Technology: EETMOS3, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 56A, Pulsed drain current: 168A, Power dissipation: 99W, Case: LA, Gate-source voltage: ±20V, On-state resistance: 5.7mΩ, Mounting: SMD, Gate charge: 38nC, Kind of package: reel; tape, Kind of channel: enhancement.