P600K-CT Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 800V 6A P600
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Strip
| Кількість | Ціна |
|---|---|
| 250+ | 76.62 грн |
| 500+ | 32.42 грн |
| 1000+ | 11.50 грн |
| 2000+ | 10.69 грн |
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Технічний опис P600K-CT Diotec Semiconductor
Description: DIODE GEN PURP 800V 6A P600, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -50°C ~ 150°C, Supplier Device Package: P600, Current - Average Rectified (Io): 6A, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: P600, Axial, Packaging: Strip.