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P60B4SN-5071 SHINDENGEN

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Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement

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Технічний опис P60B4SN-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W, Type of transistor: N-MOSFET, Technology: EETMOS3, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 60A, Pulsed drain current: 180A, Power dissipation: 62.5W, Case: FB (TO252AA), Gate-source voltage: ±20V, On-state resistance: 4mΩ, Mounting: SMD, Gate charge: 59nC, Kind of package: reel; tape, Kind of channel: enhancement.