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P6A1G

P6A1G YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A184F1B1C132C143&compId=P6A05G_P6A10G_ser.pdf?ci_sign=0b0f2bc746e2fee27903a7be5634bd90f0ed5f54 Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.1V
Case: R6
Mounting: THT
Kind of package: tape
Max. forward impulse current: 200A
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 100V
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Технічний опис P6A1G YANGJIE TECHNOLOGY

Category: THT universal diodes, Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.1V, Case: R6, Mounting: THT, Kind of package: tape, Max. forward impulse current: 200A, Features of semiconductor devices: glass passivated, Type of diode: rectifying, Semiconductor structure: single diode, Max. forward voltage: 1.1V, Load current: 6A, Max. off-state voltage: 100V.