Технічний опис P6SMB10A M4G Taiwan Semiconductor
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape, Mounting: SMD, Kind of package: reel; tape, Leakage current: 10µA, Breakdown voltage: 10V, Max. forward impulse current: 43A, Semiconductor structure: unidirectional, Max. off-state voltage: 8.55V, Type of diode: TVS, Tolerance: ±5%, Case: SMB, Peak pulse power dissipation: 0.6kW, кількість в упаковці: 5 шт.
Інші пропозиції P6SMB10A M4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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P6SMB10A M4G | Виробник : TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 43A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Case: SMB Peak pulse power dissipation: 0.6kW кількість в упаковці: 5 шт |
товар відсутній |
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P6SMB10A M4G | Виробник : TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 43A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 43A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Case: SMB Peak pulse power dissipation: 0.6kW |
товар відсутній |