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P6SMB110CA-E3/5B

P6SMB110CA-E3/5B VISHAY


p6smb.pdf Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
кількість в упаковці: 3200 шт
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Технічний опис P6SMB110CA-E3/5B VISHAY

Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 110V; 3.9A; bidirectional; ±5%; SMB; reel,tape, Type of diode: TVS, Mounting: SMD, Tolerance: ±5%, Kind of package: reel; tape, Case: SMB, Semiconductor structure: bidirectional, Leakage current: 1µA, Features of semiconductor devices: glass passivated, Manufacturer series: P6SMB, Max. forward impulse current: 3.9A, Breakdown voltage: 110V, Technology: TransZorb®, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 94V, кількість в упаковці: 3200 шт.

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P6SMB110CA-E3/5B P6SMB110CA-E3/5B Виробник : VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній